Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size-Reference-Cited by-同舟云学术

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Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size

Published:2014-12 Issue:12 Volume:54 Page:2682-2687
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Howell Robert S.,Lewis Randall,Henry H. George,Hearne Harold,Brown Deas,Dawson Dale,Ezis Andris

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Tao Nick GM, Lee Chien-Ping, Denis Anthony St., Henderson Tim. InGaP/GaAs HBT safe operating area and thermal size effect. In: International conference on compound semiconductor manufacturing technology, digest of papers, 2013. p 219–22.

2. .

3. Chiou Rei-Bin, Kuo Ta-Chuan, Lin Cheng-Kuo, Tsai Shu-Hsiao, Ho Shin-Yi, Chou Tung-Yao, Williams Dennis, Wang Yu-Chi. High efficiency and high ruggedness InGaP/GaAs HBT Epi design. In: International conference on compound semiconductor manufacturing technology, digest of papers, 2014. p. 361–4.

4. Safe operting area of GaAs HBTs based on sub-nanosecond pulse characteristics;Jin;IEEE Trans MTT,2010

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