Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors-Reference-Cited by-同舟云学术

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Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

Published:2014-09 Issue:9-10 Volume:54 Page:1707-1711
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Blasco J.,Castán H.,García H.,Dueñas S.,Suñé J.,Kemell M.,Kukli K.,Ritala M.,Leskelä M.,Miranda E.

Funder

Ministerio de Economía y Competitividad, Spain

European Union

Spanish TEC2011

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Electron transport through broken down ultra-thin SiO2 layers in MOS devices;Miranda;Microbiol Rev,2004

2. Analysis and modeling of resistive switching statistics;Long;J Appl Phys,2012

3. Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges;Waser;Adv Mater,2009

4. Intrinsic nanofilamentation in resistive switching;Wu;J Appl Phys,2013

5. Nanoscale resistive switching and filamentary conduction in NiO thin films;Ye;Appl Phys Lett,2010

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