Author:
Palankovski Vassil,Selberherr Siegfried
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference53 articles.
1. Analysis and simulation of heterostructure devices;Palankovski,2004
2. Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz;Yamashita;IEEE Electron. Dev. Lett.,2002
3. Quay R., Palankovski V., Chertouk M., Leuther A., Selberherr S. Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters. In: IEDM Tech. Dig., San Francisco, 2000. p. 186–9
4. Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistors;Eberhardt;Mater. Sci. Eng. B,2002
5. Implications of dopant-dependent low-field mobility and bandgap narrowing on the bipolar device performance;Palankovski;J. Phys. IV,1998