Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology-Reference-Cited by-同舟云学术

Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology

Published:2005-05 Issue:5-6 Volume:45 Page:937-940
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Capodieci V.,Wiest F.,Sulima T.,Schulze J.,Eisele I.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Advanced gate dielectric materials for sub-100nm CMOS;Iwai;IEDM Tech Dig,2002

2. Chin A. High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5–10Å. Symp VLSI Tech. 2000. p. 16

3. High temperature stability in lanthanum and zirconia-based gate dielectrics

4. Omicron EA 125 Energy Analyser User’s Guide V2.0, April 2001. Omicron Nanotechnology

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