Author:
Fujieda Shinji,Miura Yoshinao,Saitoh Motofumi,Teraoka Yuden,Yoshigoe Akitaka
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Kimizuka N, Yamaguchi K, Imai K, Iizuka T, Liu CT, Keller RC, et al. NBTI enhancement by nitrogen incorporation into ultrathin gate for 0.10 μm gate CMOS generation. In: 2000 Symposium on VLSI Technology Digest of Technical papers, 2000. p. 92–3
2. Mechanism of threshold voltage shift (ΔVth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs;Liu;Jpn. J. Appl. Phys,2002
3. Negative bias temperature instability: road to cross in deep submicron silicon semiconductor manufacturing;Schroder;Appl. Phys. Rev. J. Appl. Phys,2002
4. Dependence of electrical properties on nitrogen profile in ultrathin oxynitride gate dielectrics formed by using oxygen and nitrogen radicals;Watanabe;J. Appl. Phys,2001
5. Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation;Chen;IEEE Trans. Electron Devices,2002
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