Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration

Author:

Gao Z.,Meneghini M.,Rampazzo F.,Rzin M.,De Santi C.,Meneghesso G.,Zanoni E.

Funder

EDA

Horizon 2020

ESA

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc. IEEE,2002

2. A 2–11 GHz 7-bit high-linearity phase rotator based on wideband injection-locking multi-phase generation for high-speed serial links in 28-nm CMOS FDSOI;Monaco;IEEE J. Solid State Circuits,2017

3. A power-scalable 7-tap FIR equalizer with tunable active delay line for 10-to-25 Gb/s multi-mode fiber EDC in 28 nm LP-CMOS;Mammei;Dig. Tech. Pap. - IEEE Int. Solid-State Circuits Conf,2014

4. A 40 GHz to 67 GHz bandwidth 23 dB gain 5.8 dB maximum NF mm-wave LNA in 28 nm CMOS;Hadipour,2015

5. Punch-through in short-channel AlGaN/GaN HFETs;Uren;IEEE Trans. Electron Devices,2006

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