Characterization of positive bias temperature instability concerning interfacial layer thickness of HfSiON/SiO2 nMOSFET-Reference-Cited by-同舟云学术

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Characterization of positive bias temperature instability concerning interfacial layer thickness of HfSiON/SiO2 nMOSFET

Published:2019-09 Issue: Volume:100-101 Page:113444
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Roh Giyoun,Kim Hyeokjin,Kwon Youngkyu,Kang Bongkoo

Funder

SK hynix Inc., Ltd.

Ministry of Science and ICT

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. J. Robertson, Institute of Physics Publishing, 69 (2) (2006) 327–396.

2. The effect of interfacial layer properties on the performance of Hf-based gate stack devices

3. XT.1.1-5;Ioannou,2010

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