A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology-Reference-Cited by-同舟云学术

A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology

Published:2020-02 Issue: Volume:105 Page:113564
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Xie Xin,Zhu Huilong,Bi Dawei,Hu Zhiyuan,Ren JiangChuan,Zhang Haineng,Zhang Zhengxuan,Zou Shichang

Funder

Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

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2. Radiation effects in SOI technologies;Schwank;IEEE Trans. Nucl. Sci.,2003

3. Radiation effects in MOS oxides;Schwank;IEEE Trans. Nucl. Sci.,2008

4. Total-ionizing-dose effects in modern CMOS technologies;Barnaby;IEEE Trans. Nucl. Sci.,2006

5. Total-ionizing-dose induced coupling effect in the 130-nm PDSOI I/O nMOSFETs;Peng;IEEE Electron Device Lett.,2014

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1. Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices;Science and Technology of Nuclear Installations;2024-03-30

2. Investigation of Negative Bias Effect on Radiation Hardening for Double SOI Technology;IEEE Transactions on Nuclear Science;2022-04