Radiation-induced Single Event Transient effects during the reconfiguration process of SRAM-based FPGAs-Reference-Cited by-同舟云学术

Radiation-induced Single Event Transient effects during the reconfiguration process of SRAM-based FPGAs

Published:2019-09 Issue: Volume:100-101 Page:113342
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

De Sio C.,Azimi S.,Bozzoli L.,Du B.,Sterpone L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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2. Understanding radiation effects in SRAM-based FPGAs for implementing instrumentation and control systems of nuclear power plants;Nidhin;Nucl. Eng. Technol.,2017

3. On the analysis of radiation-induced Single Event Transients on SRAM-based FPGAs;Azimi;Microelectron. Reliab.,2018

4. Analyzing Radiation-induced Transient Errors on SRAM-based FPGAs by Propagation of Broadening Effect;Sio,2019

5. SET characterization and mitigation in 65-nm CMOS test structures;Rezgui;IEEE Trans. Nucl. Sci.,2012

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