Modelling and simulation of SEU in bulk Si and Ge SRAM

Author:

Moindjie S.,Munteanu D.,Autran J.L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Germanium CMOS potential from material and process perspectives: be more positive about germanium;Toriumi;Jpn. J. Appl. Phys.,2018

2. High mobility materials and novel device structures for high performance nanoscale MOSFETs;Saraswat;IEDM Technol. Digest,2006

3. Germanium for high performance MOSFETs and optical interconnects;Saraswat;ECS Trans.,2008

4. Investigation of capacitance–voltage characteristics in Ge/high-j MOS devices;Moreau;J. Non-Cryst. Solids,2009

5. Susceptibility of group-IV and III-V semiconductor-based electronics to atmospheric neutrons explored by Geant4 numerical simulations;Munteanu,2018

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