Author:
England Luke,Eng Siew Tze,Liew Chris,Lim Hock Heng
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Wire bonding in microelectronics: materials, processes, reliability, and yield;Harman,1997
2. England L, Jiang T. Reliability of Cu wire bonding to Al metallization. In: Proceedings of 57th electronic components and technology conference; 2007. p. 1604–13.
3. Wulff FW, Breach CD, Stephan D, et al. Characterisation of intermetallic growth in copper and gold ball bonds on aluminium metallization. In: Proceedings of 6th electronics packaging technology conference; 2004. p. 348–53.
4. Singh I, On JY, Levine L. Enhancing fine pitch, high I/O devices with copper ball bonding. In: Proceedings of 55th electronic components and technology conference, vol. 1; 2005. p. 843–7.
5. A comparison of copper and gold wire bonding on integrated circuit devices;Khoury;IEEE Trans Comp Hybr Manuf Technol,1990
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11 articles.
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