IGBT junction and coolant temperature estimation by thermal model-Reference-Cited by-同舟云学术

IGBT junction and coolant temperature estimation by thermal model

Published:2018-08 Issue: Volume:87 Page:168-182
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Zhihong Wu,Xiezu Su,Yuan Zhu

Funder

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Power MOSFET temperature measurements;Blackburn,1982

2. Important properties of transient thermal impedance for MOS-gated power semiconductors;Jakopovic,1999

3. The estimation of semiconductor's silicon temperature in the real operating conditions;Jakopovic,1998

4. Computer controlled measurement of power MOSFET transient thermal response;Jakopovic,1992

5. A dynamic electro-thermal model for the IGBT;Hefner;IEEE Trans. Ind. Appl.,1994

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