Impact of underfill and other physical dimensions on Silicon Lateral IGBT package reliability using computer model with discrete and continuous design variables-Reference-Cited by-同舟云学术

Impact of underfill and other physical dimensions on Silicon Lateral IGBT package reliability using computer model with discrete and continuous design variables

Published:2018-04 Issue: Volume:83 Page:146-156
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Rajaguru P.^ORCID,Lu H.,Bailey C.,Castellazzi A.,Pathirana V.,Udugampola N.,Udrea F.

Funder

EPSRC

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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2. Avalanche ruggedness of 800 V Lateral IGBTs in bulk Si;Camuso,2014

3. 800 V lateral IGBT in bulk Si for low power compact SMPS applications;Trajkovic,2013

4. Smart Materials;Schwartz,2009

5. Characterisation of encapsulants for high-voltage high-temperature power electronic packaging;Yao,2012

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