A reverse hysteresis effect of graphene transistors with amorphous silicon gate dielectric-Reference-Cited by-同舟云学术

A reverse hysteresis effect of graphene transistors with amorphous silicon gate dielectric

Published:2018-06 Issue: Volume:85 Page:118-121
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Zhang Qingwei,Li Ping,Liao Yongbo,Wang Gang,Zeng Rongzhou,Wang Heng

Funder

National Natural Science Foundation of China

State Key Laboratory of Electronic Thin Films and Integrated Devices

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

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3. Temperature and gate voltage dependent electrical properties of graphene field-effect transistors;Feng;Carbon,2014

4. Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics;Lee;Appl. Phys. Lett.,2011

5. The role of charge traps in inducing hysteresis: capacitance-voltage measurements on top gated bilayer graphene;Kalon;Appl. Phys. Lett.,2011

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