Impacts of carbon ions on SEU in SOI SRAM
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Published:2021-11
Issue:
Volume:126
Page:114341
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ISSN:0026-2714
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Container-title:Microelectronics Reliability
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language:en
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Short-container-title:Microelectronics Reliability
Author:
Gao J.,Zhang Q.,Xi K.,Li B.,Li B.,Wang C.,Lu P.,Wang K.,Zhang G.,Zhao F.,Li J.,Hao L.,Wang L.,Luo J.,Han Z.,Liu J.,Guo G.
Funder
National Natural Science Foundation of China
Chinese Academy of Sciences
Youth Innovation Promotion Association
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. The impacts of heavy-ion energy on single event upsets in SOI SRAMs;Gu;IEEE TNS,2018
2. Proton and Light Ions Induced SEU Effect in a SOI SRAM With Gold Plated Lid, MR;Gao,2019
3. Back Gate Impact on SEU Characterization of a Double SOI 4k-bit SRAM, NSREC 2018;Gao,2018
4. Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits;Dodd;TNS,2007
5. GEANT4-a simulation toolkit?;Agostinelli;Nucl. Instrum. Meth. Phys. Res. A,2003