Author:
Wu R.,Agbo S.N.,Mendy S.,Bashar E.,Jahdi S.,Gonzalez Ortiz,Alatise O.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy;Boige,2019
2. Device screening strategy for balancing short-circuit behavior of paralleling silicon carbide MOSFETs;Ke;IEEE Trans. Device Mater. Reliab.,2019
3. Experimental and numerical investigations of short-circuit failure mechanisms for state-of-the-Art 1.2kV SiC trench MOSFETs;Okawa,2019
4. Effect of parasitic inductance mismatch on short-circuit characterization of paralleled SiC MOSFETs;Zou,2019
5. Investigation of threshold voltage stability of SiC MOSFETs;Peters,2018
Cited by
11 articles.
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