Recharging process of commercial floating-gate MOS transistor in dosimetry application-Reference-Cited by-同舟云学术

Recharging process of commercial floating-gate MOS transistor in dosimetry application

Published:2021-11 Issue: Volume:126 Page:114322
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ilić Stefan D.,Andjelković Marko S.,Duane Russell,Palma Alberto J.,Sarajlić Milija,Stanković Srboljub,Ristić Goran S.

Funder

European Commission

Ministarstvo Prosvete, Nauke i Tehnološkog Razvoja

Horizon 2020 Spreading Excellence and Widening Participation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

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3. Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors;Ristic;J. Phys. D. Appl. Phys.,2008

4. The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses;Ristic;Appl. Radiat. Isot.,2015

5. The direct ion storage dosemeter;Kahilainen;Radiat. Prot. Dosim.,1996

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1. Towards a Smart Multi-Sensor Ionizing Radiation Monitoring System;2023 26th Euromicro Conference on Digital System Design (DSD);2023-09-06

2. An Enhanced Sensitivity Operation Mode for Floating Gate Dosimeters;IEEE Transactions on Nuclear Science;2022-08