Author:
You Shuzhen,Geens Karen,Borga Matteo,Liang Hu,Hahn Herwig,Fahle Dirk,Heuken Michael,Mukherjee Kalparupa,De Santi Carlo,Meneghini Matteo,Zanoni Enrico,Berg Martin,Ramvall Peter,Kumar Ashutosh,Björk Mikael T.,Ohlsson B. Jonas,Decoutere Stefaan
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Materials and processing issues in vertical GaN power electronics;Hu;Mater. Sci. Semicond. Process.,2018
2. Review of the recent progress on GaN-based vertical powerSchottky barrier diodes (SBDs);Sun;Electronics,2019
3. 1.7 kV/1.0 mOcm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure;Shibata,2016
4. A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer;Shrestha;Vacuum,2015
5. 1200V GaN vertical Fin power field-effect transistors;Zhang,2017
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献