Author:
Zhang Hong,Guo Hong-xia,Zhang Feng-qi,Lei Zhi-feng,Pan Xiao-yu,Liu Yi-tian,Gu Zhao-qiao,Ju An-an,Zhong Xiang-li,Ouyang Xiao-ping
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Investigations on SiC[J];Van Daal;J. Appl. Phys.,1961
2. Advances in SiC power MOSFET technology[J];Dimitrijev;Microelectron. Reliab.,2003
3. An assessment of wide bandgap semiconductors for power devices[J];Hudgins;IEEE Trans. Power Electron.,2003
4. SiC power devices—present status, applications and future perspective[C]//2011 IEEE 23rd international symposium on power semiconductor devices and ICs;Östling;IEEE,2011
5. Single event effects in Si and SiC power MOSFETs due to terrestrial neutrons[J];Akturk;IEEE Trans. Nucl. Sci.,2016
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