SEU performance of Schmitt-trigger-based flip-flops at the 22-nm FD SOI technology node

Author:

Li Zongru,Elash Christopher,Jin Chen,Chen Li,Wen Shi-Jie,Fung Rita,Xing Jiesi,Shi Shuting,Yang Zhi Wu,Bhuva Bharat L.

Funder

Natural Sciences and Engineering Research Council of Canada

Cisco Systems Inc

CMC Microsystems

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Evaluation of heavy-ion-induced SEU cross sections of a 65-nm thin BOX FD-SOI flip-flops based on stacked inverter;Furuta,2018

2. Temporal pulse-clocked multi-bit flip-flop mitigating SET and SEU;Kumar,2015

3. Large-tilt heavy ions induced SEU in multiple radiation hardened 22 nm FDSOI SRAMs;Cai,2020

4. Comparison of total ionizing dose effects in 22-nm and 28-nm FD SOI technologies;Li;Electronics,2022

5. Efficacy of transistor interleaving in DICE flip-flops at a 22 nm FD SOI technology node;Elash;Appl. Sci.,2022

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