The defects of reported TID reinforced structures and the improved structure-Reference-Cited by-同舟云学术

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The defects of reported TID reinforced structures and the improved structure

Published:2023-07 Issue: Volume:146 Page:115018
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Liao Yongbo,Liu Yangmeng,Li Ping,Feng Ke,Yuan Pigen

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Radiation effects and hardening of MOS technology: devices and circuits;Hughes;IEEE Trans. Nucl. Sci.,2003

2. Processing effects on steam oxide hardness;Schlesier;IEEE Trans. Nucl. Sci.,1976

3. The effect of gate oxide thickness on the radiation hardness of silicon-gate CMOS;Nordstrom;IEEE Trans. Nucl. Sci.,1981

4. Enhanced TID susceptibility in sub-100 nm bulk CMOS I/O transistors and circuits;McLain;IEEE Trans. Nucl. Sci.,2007

5. Modeling low dose rate effects in shallow trench isolation oxides;Esqueda;IEEE Trans. Nucl. Sci.,2011

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1. Reliability Assessment of Anti-SEU Computer System with Timed Refresh and Backup Fault Tolerance;2023 Global Reliability and Prognostics and Health Management Conference (PHM-Hangzhou);2023-10-12

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