Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT)-Reference-Cited by-同舟云学术

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Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT)

Published:2023-11 Issue: Volume:150 Page:115215
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Huang Zhen-Hong,Yang Tsung-Ying,Wu Jui-Sheng,Liang Yan-Kui,Hsu Jen-Fu,Lin Wei-Cheng,Wu Tian-Li,Chang Edward Yi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc. IEEE,2002

2. GaN-on-Si power technology: devices and applications;Chen;IEEE Trans. Electron Devices,2017

3. Review of commercial Gan power devices and Gan-based converter design challenges;Jones;IEEE J. Emerg. Sel. Top. Power Electron.,2016

4. An overview of normally-off Gan-based high electron mobility transistors;Roccaforte;Materials,2019

5. High-temperature characteristics of GaN-based inverter integrated with enhancement-mode (E-mode) MOSFET and depletion-mode (D-mode) HEMT;Xu;IEEE Electron Device Lett.,2014

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