Precise estimation of dynamic junction temperature of SiC transistors for lifetime prediction of power modules used in three-phase inverters

Author:

Teixeira Alice,Cougo Bernardo,Segond Gilles,Morais Lenin M.F.,Andrade Marco,Tran Duc Hoan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Stress Analysis and Lifetime Estimation on Power MOSFETs for Automotive ABS Systems;Testa,2008

2. Characterization and reliability of SiC- and GaN-based power transistors for renewable energy applications;Kaplar,2012

3. Reliability issues in GaN and SiC power devices;Ueda,2014

4. Accelerated active ageing test on SiC JFETs power module with silver joining technology for high temperature application;Dupont;Microelectron. Reliab.,2009

5. High-temperature die-attaches for SiC power devices;Masson,2011

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