Effects of solder degradation on the die temperature measurement via internal gate resistance-Reference-Cited by-同舟云学术

Effects of solder degradation on the die temperature measurement via internal gate resistance

Published:2020-11 Issue: Volume:114 Page:113879
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Kawahara C.,Brandelero J.,Pichon P.,Mollov S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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2. IGBT module with user accessible on-chip current and temperature sensors;Motto,2012

3. Robust on-line junction temperature estimation of IGBT power modules based on Von during PWM power cycling;Degrenne,2019

4. On-line virtual junction temperature measurement via DC gate current injection;Brandelero,2018

5. Comparative study of determining junction temperature of SiC MOSFETs during power cycling tests by a Tj sensor and the VSD(T)-method;Kempiak,2020

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1. Real-Time Extraction of SiC mosfets’ Degradation Features Under Improved Accelerated Power Cycling Tests for DC-SSPC Application;IEEE Transactions on Power Electronics;2023-05

2. Relative importance of solder and wire bond defects on the maximum junction temperature of IGBT devices;Microelectronics Reliability;2021-11

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