Analysis of OFF-state dynamic avalanche instability in silicon-on-insulator lateral IGBTs at low temperature
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Published:2020-04
Issue:
Volume:107
Page:113600
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ISSN:0026-2714
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Container-title:Microelectronics Reliability
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language:en
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Short-container-title:Microelectronics Reliability
Author:
Zhang Long,Zhu Jing,Cao Shilin,Gong Jinli,Ma Jie,Li Shaohong,Zhu Zexin,Cao Mengling,Sun Weifeng
Funder
National Natural Science Foundation of China
China National Key Research and Development Plan Project
Postdoctoral Research Funding of Jiangsu
Key Research and Development Plan of Jiangsu
Fundamental Research Funds for the Central Universities
Joint Fund for the Pre-research of Equipment
China Postdoctoral Science Foundation
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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3. Carrier-storage effect and extraction-enhanced lateral IGBT (E2LIGBT): a super-high speed and low on-state voltage LIGBT superior to LDMOSFET;Takahashi,2012
4. Three-input type single-chip inverter IC including a function to generate six signals and dead time;Sakurai,2008
5. Optimization of VCE plateau for deep-oxide trench SOI lateral IGBT during inductive load turn-OFF;Zhang;IEEE Trans. on Electron Devices,2018
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