Recovery investigation of NBTI-induced traps in n-MOSFET devices

Author:

Djezzar Boualem,Benabdelmoumene Abdelmadjid,Zatout Boumediene,Messaoud Dhiaelhak,Chenouf Amel,Tahi Hakim,Boubaaya Mohamed,Timlelt Hakima

Funder

Directorate General for Scientific Research and Technological Development/Ministry of High Education and Scientific Research of Algeria

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference36 articles.

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2. As-grown-generation (AG) model of NBTI: a shift from fitting test data to prediction;Zhang;Microelectron. Reliab.,2018

3. The permanent component of NBTI revisited: saturation, degradation-reversal, and annealing;Grasser;Int. Reliab. Phys. Symp.,2016

4. A comparative study of different physics based NBTI models;Mahapatra;IEEE Trans. Electron Dev,2013

5. Are interface state generation and positive oxide charge trapping under negative-bias temperature stressing correlated or coupled?;Ho;IEEE Trans. Electron Dev,2012

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