Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test-Reference-Cited by-同舟云学术

Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test

Published:2020-11 Issue: Volume:114 Page:113785
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Zhao D.,Letz S.,Yu Z.,Schletz A.,März M.

Funder

Fraunhofer-Gesellschaft

Bundesministerium für Bildung und Forschung

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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2. A method for the characterization of adhesion strength degradation of thin films on Si-substrate under thermal cycling test;Zhao,2020

3. Cross-sectional nanoindentation: a new technique for thin film interfacial adhesion characterization;Sánchez;Acta Mater.,1999

4. Cross-sectional nanoindentation for copper adhesion characterization in blanket and patterned interconnect structures: experiments and three-dimensional FEM modeling;Roy;Int. J. Fract.,2007

5. Interfacial fracture induced by cross-sectional nanoindentation in metal–ceramic thin film structures;Elizalde;Acta Mater.,2003

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