Predicting and mitigating single-event upsets in DRAM using HOTH-Reference-Cited by-同舟云学术

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Predicting and mitigating single-event upsets in DRAM using HOTH

Published:2021-02 Issue: Volume:117 Page:114024
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Longofono Stephen,Kline Donald,Melhem Rami,Jones Alex K.

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Predicting single event effects in dram;Kline,2019

2. CSP: A Multifaceted Hybrid Architecture for Space Computing;Rudolph,2014

3. Technology for sub-50nm dram and nand flash manufacturing;Kim,2005

4. Flipping bits in memory without accessing them: an experimental study of dram disturbance errors;Kim,2014

5. ArchShield: architectural framework for assisting dram scaling by tolerating high error rates;Nair,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HARP: Practically and Effectively Identifying Uncorrectable Errors in Memory Chips That Use On-Die Error-Correcting Codes;MICRO-54: 54th Annual IEEE/ACM International Symposium on Microarchitecture;2021-10-17

2. Tuning Memory Fault Tolerance on the Edge;Proceedings of the 2021 on Great Lakes Symposium on VLSI;2021-06-22

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