Author:
Dammann M.,Pletschen W.,Waltereit P.,Bronner W.,Quay R.,Müller S.,Mikulla M.,Ambacher O.,van der Wel P.J.,Murad S.,Rödle T.,Behtash R.,Bourgeois F.,Riepe K.,Fagerlind M.,Sveinbjörnsson E.Ö.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Reliability of GaN high-electron-mobility transistors: state of the art and perspectives;Meneghesso;IEEE Trans Dev Mater Reliab,2008
2. Conway AM, Chen M, Hashimoto P, Willadsen PJ, Micovic M. Accelerated RF life testing of GaN HFETs. In: International reliability physics symposium, Phoenix; 2007. p. 472–5.
3. Critical voltage for electrical degradation of GaN high-electron mobility transistors;Joh;IEEE Electron Dev Lett,2008
4. Joh J, Xia L, del Alamo JA. Gate current degradation mechanism of GaN high electron mobility transistors. In: IEDM tech digest; 2007. p. 385–8.
5. Waltereit P, Bronner W, Quay R, Dammann M, Müller S, Kiefer R, et al. A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160V delivering more than 60% PAE at 80V. In: CS mantech conf; 2008 [section 5.3].
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