An investigation into the thermal surface contact resistance, fin width and temperature on negative bias temperature instability during self-heating

Author:

Liu Yan,Ma Yanhua,Pan Chong

Publisher

Elsevier BV

Reference29 articles.

1. Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs;Parihar,2017

2. New insight into negative bias temperature instability degradation during self-heating in nanoscale bulk FinFETs;Son;IEEE Electron Device Lett.,2019

3. Technology scaling on high-K & metal-gate FinFET BTI reliability;Lee,2013

4. Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique;Tahi;Microelectron. Reliab.,2014

5. Time dependent variability in RMG-HKMG FinFETs: impact of extraction scheme on stochastic NBTI;Chaudhary,2015

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