Improvement of VRT immunity using low 10-boron word line in recent DRAM

Author:

Jang Dongkyu,Kim Daekyum,Lee Jieun,Lee Inkyum,Ahn Sang Bin,Hong Yoonki,Kim Shindeuk,Park Taehoon,Ban Hyodong

Publisher

Elsevier BV

Reference31 articles.

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4. Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time;Saino,2000

5. Technology scaling challenges and opportunities of memory devices;Lee,2016

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