Investigating stress measurement capabilities of GHz Scanning Acoustic Microscopy for 3D failure analysis-Reference-Cited by-同舟云学术

Investigating stress measurement capabilities of GHz Scanning Acoustic Microscopy for 3D failure analysis

Published:2016-09 Issue: Volume:64 Page:336-340
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Khaled A.,Brand S.,Kögel M.,Appenroth T.,De Wolf I.

Funder

PVA TePla Analytical Systems GmbH

EMPIR project 3D STACK

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. In-depth Raman spectroscopy analysis of various parameters affecting the mechanical stress near the surface and bulk of Cu-TSVs;De Wolf;Proc. - Electron. Compon. Technol. Conf.,2012

2. Failure and Stress Analysis of Cu TSVs Using GHz-Scanning Acoustic Microscopy and Polariscopy;De Wolf,2015

3. High frequency scanning acoustic microscopy applied to 3D integrated process: void detection in through silicon vias;Phommahaxay;Proc. - Electron. Compon. Technol. Conf.,2013

4. Surface Characterization Using the Restricted Aperture Acoustic Microscope;Chizhik,1991

5. Ray interpretation of the material signature in the acoustic microscope;Parmon;Electron. Lett.,1979

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