Transient dual interface measurement of junction-to-case thermal resistance in AlGaN/GaN HEMT utilizing an improved infrared microscope

Author:

Zhai Yuwei,Liang Faguo,Guo Chunsheng,Liu Yan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

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2. Measurement of channel temperature in GaN high-electron mobility transistors;Joh;IEEE Trans. Electron Devices,2009

3. Microcircuits, method 1012.1, thermal characteristics,1980

4. Development of a standard for transient measurement of junction-to-case thermal resistance;Pape;Microelectron. Reliab.,2012

5. J. Transient dual interface test method for the measurement of the thermal resistance junction-to-case of semiconductor devices with heat flow through a single path,2010

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