ESD tests on 850nm GaAs-based VCSELs-Reference-Cited by-同舟云学术

ESD tests on 850nm GaAs-based VCSELs

Published:2016-09 Issue: Volume:64 Page:617-622
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Vanzi M.,Mura G.,Marcello G.,Xiao K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Sensitivity Testing, Machine Model,1996

2. Sensitivity Testing, Human Body Model (HBM),1998

3. Device Testing: Charged Device Model,1996

4. Military Standard for Test Methods and Procedures for Microelectronics: ESD Sensitivity Classification,1989

5. EIA/JESSD22-A114,1996

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrostatic discharge induced degradation of optical-electrical properties and defect evolution of GaAs-based oxide-confined VCSELs;Optics Express;2023-11-15

2. Analysis of InGaAs/InP p-I-n Photodiode Failed by Electrostatic Discharge;Journal of Electronic Materials;2023-05-24

3. Oxide-confined GaAs-based vertical-cavity surface-emitting laser: Measurement and modeling of the strain field;Journal of Applied Physics;2023-04-13

4. 垂直腔面发射激光器中位错形成及扩展特性分析;Laser & Optoelectronics Progress;2023

5. Degradation Characteristics and Mechanism of High Speed 850 nm Vertical-Cavity Surface-Emitting Laser during Accelerated Aging;Photonics;2022-10-26