Effects of voltage stress on the single event upset (SEU) response of 65 nm flip flop

Author:

Chua C.T.,Ong H.G.,Sanchez K.,Perdu P.,Gan C.L.

Funder

Providence Health Care

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

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3. Performance, Reliability, Radiation Effects, and Aging Issues in Microelectronics - from Atomic-Scale Physics to Engineering-Level Modeling;Pantelides,2009

4. Modeling and investigations on TID-ASETs synergistic effect in LM124 operational amplifier from three different manufacturers;Roig;IEEE Trans. Nucl. Sci.,2013

5. The impact of aging effects and manufacturing variation on SRAM soft-error rate;Cannon;IEEE Trans. Device Mater. Reliab.,2008

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Heuristic Detection of the Most Vulnerable Regions in Electronic Devices for Radiation Survivability;ECS Journal of Solid State Science and Technology;2022-08-01

2. Radiation Tolerant SRAM Cell Design in 65nm Technology;Journal of Electronic Testing;2021-04

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