Author:
Turchanikov V.,Nazarov A.,Lysenko V.,Ostahov V.,Winkler O.,Spangenberg B.,Kurz H.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference4 articles.
1. Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots;Turchanikov;Mater Sci Eng B,2005
2. Tkachev Y, Liu Xian, Kotov A, Markov V, Levi A, Observation of single electron trapping/detrapping events in tunnel oxide SuperFlash memory cell. In: Proceedings of 2004 non-volatile memory technology symposium, 15–17 November 2004. p. 45.
3. Turchanikov V, Nazarov A, Lysenko V, Winkler O, Spangenberg B, Kurz H. Computer as a tool for nanocluster NVM cells diagnostics. In: Proceedings of the EUROCON 2005 international conference, 21–24 November 2005. p. 358.
4. Charge trapping in Si-implanted SiO2–Si memory devices at high electric fields and elevated temperatures;Turchanikov;J Phys: Conf Ser,2005
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