Author:
Yang Lin-An,Yu Chun-Li,Hao Yue
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. BSIM: Berkeley short-channel IGFET model for MOS transistors;Sheu;IEEE J. Solid-State Circuits,1987
2. A physical and scalable I–V model in BSIM3V3 for analog/digital circuit simulation;Cheng;IEEE Trans. Electron. Devices,1997
3. BSIM4v1 MOSFET Model Manual;Liu,2000
4. MOSFET Models for VLSI Circuit Simulation Theory and Practice;Arora,1993
5. A unified MOSFET Channel charge model for device modeling in circuit simulation;Cheng;IEEE Trans. CAD Integrat. Circuits Syst.,1998
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