Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors-Reference-Cited by-同舟云学术

Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors

Published:2008-02 Issue:2 Volume:48 Page:193-199
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Huang Sheng-Yi,Chen Kun-Ming,Huang Guo-Wei,Hung Cheng-Chou,Liao Wen-Shiang,Chang Chun-Yen

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

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2. Si/SiGe/Si heterojunction bipolar transistor;Zhenqiang;IEEE Trans Microwave Theory Tech,2002

3. Costou A, et al, Frequency synthesis from 2 to 30GHz using 0.35μm BiCMOS SiGe technology. In: Proc. 33rd European microwave conference, Munich; 2003. p. 395–395.

4. Mazouffre O, et al. A 23–24GHz low power frequency synthesizer in 0.25μm SiGe. In: Proc. 35th European microwave conference, Paris; 2005.

5. Degradation mechanism in polysilicon emitter bipolar junction transistors for digital application;Vendrame;Microelectron Reliab,2002

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