Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors

Author:

Cortés I.,Fernández-Martínez P.,Flores D.,Hidalgo S.,Rebollo J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Modeling and characterization of an 80V LDMOSFET for emerging RFIC applications;Perugupalli;IEEE Trans Electron Dev,1998

2. A novel high performance stacked LDD RF LDMOSFET;Cai;IEEE Electron Dev Lett,2001

3. Kohn E, Lepore A, Lee H, Levy M. Performance evaluation of GaAs based MODFET. In: Proc. IEEE/Cornell conf. on adv. concepts in high speed semicond. dev. and circuits, 1989. p. 91–100.

4. Fundamentals of modern VLSI devices;Taur,1988

5. Sentaurus TCAD TOOL Suite. Synopsys, 2006.

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1. Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs;IEEE Transactions on Nuclear Science;2019-04

2. TID Effects on Soft-breakdown and Self-heating Characteristics of 400V SOI NLDMOSFETs;2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2018-09

3. Static and dynamic electrical performances of STI thin-SOI power LDMOS transistors;Semiconductor Science and Technology;2008-08-21

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