Modeling the sensitivity of CMOS circuits to radiation induced single event transients-Reference-Cited by-同舟云学术

Modeling the sensitivity of CMOS circuits to radiation induced single event transients

Published:2008-01 Issue:1 Volume:48 Page:29-36
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Wirth Gilson I.,Vieira Michele G.,Neto Egas H.,Kastensmidt Fernanda Lima

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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3. Device simulation study of the SEU sensitivity of SRAMs to ion tracks generated by nuclear reactions;Palau;IEEE Trans Nucl Sci,2001

4. Various SEU conditions in SRAM studied by 3-D device simulation;Castellani-Coulié;IEEE Trans Nucl Sci,2001

5. Terrestrial cosmic rays;Ziegler;IBM J R& D,1996

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