Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy

Author:

Lin Shih-Hung,Wu You-Lin,Hwang Yu-Huei,Lin Jing-Jenn

Funder

National Science Council of Taiwan, R.O.C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

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2. Memory technology in the future;Kim;Microelectron Eng,2007

3. Shin Y. Non-volatile memory mechnologies for beyond 2010. In: Digest of technical papers, symposium on VLSI circuits; June 16–18 2005. p. 156–9.

4. Non-volatile memory technologies: emerging concepts and new materials;Bez;Mater Sci Semicond Process,2004

5. Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films;Jeong;Appl Phys Lett,2009

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