Failure analysis of ESD-stressed SiC MESFET-Reference-Cited by-同舟云学术

Failure analysis of ESD-stressed SiC MESFET

Published:2015-08 Issue:9-10 Volume:55 Page:1542-1548
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Phulpin T.,Trémouilles D.,Isoird K.,Tournier D.,Godignon P.,Austin P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Analysis of an ESD failure mechanism on a SiC MESFET;Phulpin,2014

2. “4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits”, in Solid-State Device Research Conference.;Alexandru,2013

3. Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance;Mogniotte,2014

4. Design of an integrated power converter in wide band gap for harsh environments;Mogniotte,2012

5. 20V–400A SiC Zener diodes with excellent temperature coefficient;Ishii,2007

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3. Contribution to Silicon-Carbide-MESFET ESD Robustness Analysis;IEEE Transactions on Device and Materials Reliability;2018-06