Author:
Yu Zhihui,Jin Hao,Dong Shurong,Wong Hei,Zeng Jie,Wang Weihuai
Funder
NSFC
general research fund (GRF)
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Analysis of lateral DMOS power devices under ESD stress conditions;Mergens;IEEE Trans. Electron Devices,2000
2. A review on the ESD robustness of drain-extended MOS devices;Shrivastava;IEEE Trans. Device Mater. Reliab.,2012
3. Analysis and optimization of HV ESD protection;Wang,2010
4. Improving safe operating area of nLDMOS array with embedded silicon controlled rectifier for ESD protection in a 24-V BCD process;Chen;IEEE Trans. Electron Devices,2011
5. Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices;Wang,2014