Degradation study of single poly radiation sensors by monitoring charge trapping-Reference-Cited by-同舟云学术

Degradation study of single poly radiation sensors by monitoring charge trapping

Published:2016-04 Issue: Volume:59 Page:18-25
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Pikhay Evgeny^ORCID,Roizin Yakov,Nemirovsky Yael

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Radiation array sensor based on C-flash floating gate device;Pikhay,2014

2. Radiation tolerance of NROM embedded products;Lisiansky;IEEE Trans. Nucl. Sci.,2010

3. Characterization of single poly radiation sensors;Pikhay;IEEE Electron Device Lett.,2015

4. Radiation effects on P+ poly gate MOS structures with thin oxides;Yoshii;IEEE Trans. Nucl. Sci.,1989

5. Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2 interface under γ-irradiation: effect of preliminary ion implantation;Naumova;Semicond. Sci. Technol.,2012

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