Characterization and modeling of power MOSFET switching times variations under constant electrical stress-Reference-Cited by-同舟云学术

Characterization and modeling of power MOSFET switching times variations under constant electrical stress

Published:2015-02 Issue:3-4 Volume:55 Page:492-497
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Sezgin Hatice Gül,Özçelep Yasin

Funder

Istanbul University Research Fund

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

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4. Real-time temperature estimation for power MOSFETs considering thermal aging effects;Chen;IEEE Trans Dev Mater Reliab,2014

5. Jain A, Islam AE, Alam MA. On the electro-mechanical reliability of NEMFET as an analog/digital switch. In: IEEE international reliability physics symposium (IRPS); 2012. p. ME.1.1.–ME.1.7.

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3. A New Approach for VDMOSFETs’ Gate Oxide Degradation Based on Capacitance and Subthreshold Current Measurements Under Constant Electrical Stress;IEEE Transactions on Electron Devices;2018-04

4. Modelling of Degraded Power MOSFET Effects on Inverter Static Parameters;Materials Today: Proceedings;2016