TCAD evaluation of single-event burnout hardening design for SiC Schottky diodes-Reference-Cited by-同舟云学术

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TCAD evaluation of single-event burnout hardening design for SiC Schottky diodes

Published:2022-12 Issue: Volume:139 Page:114865
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chen Jia-Hao,Wang Ying,Guo Hao-min,Fei Xin-Xing,Yu Cheng-hao,Bao Meng-Tian

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices;Bhatnagar;IEEE Trans. Electron Devices,1993

2. SiC power devices — present status, applications and future perspective;Östling,2011

3. Silicon carbide benefits and advantages for power electronics circuits and systems;Elasser;Proc. IEEE,2002

4. Single-event burnout of silicon carbide Schottky barrier diodes caused by high energy protons;Kuboyama;IEEE Trans. Nucl. Sci.,2007

5. Heavy ion induced degradation in SiC schottky diodes: bias and energy deposition dependence;Javanainen;IEEE Trans. Nucl. Sci.,2017

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