A general approach for degradation modeling to enable a widespread use of aging simulations in IC design-Reference-Cited by-同舟云学术

A general approach for degradation modeling to enable a widespread use of aging simulations in IC design

Published:2022-10 Issue: Volume:137 Page:114775
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Lange André,Gonzalez Fabio A. Velarde^ORCID,Giering Kay-Uwe,Vervantidis Anastasios,Hahne Lukas^ORCID,Heinig Andy,Jancke Roland^ORCID

Funder

Bundesministerium für Wirtschaft und Energie

European Regional Development Fund

Freistaat Sachsen

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference64 articles.

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5. JEDEC JESD28-A, “Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation Under DC Stress”,2001

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