Author:
Fregolent M.,Boito M.,Marcuzzi A.,De Santi C.,Chiocchetta F.,Treidel E. Bahat,Wolf M.,Brunner F.,Hilt O.,Würfl J.,Meneghesso G.,Zanoni E.,Meneghini M.
Funder
Horizon 2020
Electronic Components and Systems for European Leadership
European Commission
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Emerging GaN technologies for power, RF, digital, and quantum computing applications: recent advances and prospects;Hoo Teo;J. Appl. Phys.,2021
2. GaN-based power devices: physics, reliability, and perspectives;Meneghini;J. Appl. Phys.,2021
3. Challenges and perspectives for vertical GaN-on-Si trench MOS reliability: from leakage current analysis to gate stack optimization;Mukherjee;Materials (Basel),2021
4. Vertical GaN power devices;Chowdhury,2020
5. On the conduction properties of vertical GaN n-channel trench MISFETs;Bahat Treidel;IEEE J. Electron Devices Soc.,2021