Author:
Tala-Ighil B.,Oukaour A.,Gualous H.,Boudart B.,Pouderoux B.,Trolet J-L.,Piccione M.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Effects of gamma irradiation on the insulated gate bipolar transistor;Tong;Microelectron Reliab,1996
2. Heavy ion induced failures in a power IGBT;Lorfèvre;IEEE Trans Nucl Sci,1997
3. Study of dose effects on igbt-type devices subjected to gamma irradiation;Marceau;IEEE Trans Nucl Sci,1999
4. McDonald PT, et al. Destructive heavy ion SEE investigation of 3 IGBT Devices. In: The proceedings of radiation effects data workshop, Reno, NV, USA, July 24–28, 2000. p. 11–5.
5. Jordà X. Al, Electrical parameter variation of PT-IGBT by backside proton irradiation. In: International semiconductor conference, 28 September–02 October, 2003, vol. 2; 2003. p. 289–92.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献