High performance AlxGa1−xN-based avalanche photodiodes-Reference-Cited by-同舟云学术

High performance AlxGa1−xN-based avalanche photodiodes

Published:2007-10 Issue:2-3 Volume:5 Page:140-144
ISSN:1569-4410
Container-title:Photonics and Nanostructures - Fundamentals and Applications
language:en
Short-container-title:Photonics and Nanostructures - Fundamentals and Applications

Author:

Tut Turgut,Butun Bayram,Gokkavas Mutlu,Ozbay Ekmel

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. High-Performance Solar-Blind Photodetectors Based on Al<tex>$_rm x$</tex>Ga<tex>$_1-rm x$</tex>N Heterostructures

2. Improved solar-blind external quantum efficiency of back-illuminated AlxGa1−xN heterojunction pin photodiodes

3. High-speed visible-blind GaN-based indium–tin–oxide Schottky photodiodes

4. Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity

5. Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent advances in ultraviolet photodetectors;Materials Science in Semiconductor Processing;2015-01

2. Integrated AlGaN quadruple-band ultraviolet photodetectors;Semiconductor Science and Technology;2012-04-27

3. Design, fabrication and characterization of high-performance AlGaN UV photodetectors;2010 IEEE Photinic Society's 23rd Annual Meeting;2010-11

4. AlGaN quadruple-band photodetectors;2009 IEEE LEOS Annual Meeting Conference Proceedings;2009-10

5. Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes;Semiconductor Science and Technology;2009-07-31